The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.
|頁（從 - 到）||349-353|
|期刊||IEEE Transactions on Components, Packaging and Manufacturing Technology|
|出版狀態||Published - 2012 二月|
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