@article{2968fd239daf4368be6e02a9ae1c9317,
title = "GaN-Based LEDs with sapphire debris removed by phosphoric etching",
abstract = "The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.",
author = "Chang, {Shoou Jinn} and Kuo, {D. S.} and Lam, {K. T.} and Wen, {K. H.} and Ko, {T. K.} and Hon, {S. J.}",
note = "Funding Information: Manuscript received June 1, 2011; revised August 16, 2011; accepted August 24, 2011. Date of publication November 15, 2011; date of current version February 3, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research, under Contract 100-D0204-6. Recommended for publication by Associate Editor A. Shapiro upon evaluation of reviewers{\textquoteright} comments.",
year = "2012",
month = feb,
doi = "10.1109/TCPMT.2011.2167972",
language = "English",
volume = "2",
pages = "349--353",
journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",
issn = "2156-3950",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}