GaN-Based LEDs with sapphire debris removed by phosphoric etching

Shoou Jinn Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, S. J. Hon

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

原文English
文章編號6081909
頁(從 - 到)349-353
頁數5
期刊IEEE Transactions on Components, Packaging and Manufacturing Technology
2
發行號2
DOIs
出版狀態Published - 2012 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 工業與製造工程
  • 電氣與電子工程

指紋

深入研究「GaN-Based LEDs with sapphire debris removed by phosphoric etching」主題。共同形成了獨特的指紋。

引用此