GaN-Based LEDs with sapphire debris removed by phosphoric etching

Shoou Jinn Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, S. J. Hon

研究成果: Article

9 引文 斯高帕斯(Scopus)

摘要

The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H 3PO 4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.

原文English
文章編號6081909
頁(從 - 到)349-353
頁數5
期刊IEEE Transactions on Components, Packaging and Manufacturing Technology
2
發行號2
DOIs
出版狀態Published - 2012 二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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