GaN-Based light-emitting-diode with a p-InGaN layer

P. H. Chen, Cheng Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, S. J. Chang

研究成果: Article

1 引文 (Scopus)

摘要

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

原文English
文章編號6679256
頁(從 - 到)204-207
頁數4
期刊IEEE/OSA Journal of Display Technology
10
發行號3
DOIs
出版狀態Published - 2014 三月 1

指紋

Light emitting diodes
light emitting diodes
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Chen, P. H. ; Kuo, Cheng Huang ; Lai, W. C. ; Chen, Yu An ; Chang, L. C. ; Chang, S. J. / GaN-Based light-emitting-diode with a p-InGaN layer. 於: IEEE/OSA Journal of Display Technology. 2014 ; 卷 10, 編號 3. 頁 204-207.
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GaN-Based light-emitting-diode with a p-InGaN layer. / Chen, P. H.; Kuo, Cheng Huang; Lai, W. C.; Chen, Yu An; Chang, L. C.; Chang, S. J.

於: IEEE/OSA Journal of Display Technology, 卷 10, 編號 3, 6679256, 01.03.2014, p. 204-207.

研究成果: Article

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