GaN-Based light-emitting-diode with a p-InGaN layer

P. H. Chen, Cheng Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, S. J. Chang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

原文English
文章編號6679256
頁(從 - 到)204-207
頁數4
期刊IEEE/OSA Journal of Display Technology
10
發行號3
DOIs
出版狀態Published - 2014 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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