GaN-Based light-emitting-diode with a p-InGaN layer

P. H. Chen; Cheng Huang Kuo; W. C. Lai; Yu An Chen; L. C. Chang; S. J. Chang

doi:10.1109/JDT.2013.2293767

GaN-Based light-emitting-diode with a p-InGaN layer

P. H. Chen, Cheng Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, S. J. Chang

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In_0.01\Ga_0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

原文	English
文章編號	6679256
頁（從 - 到）	204-207
頁數	4
期刊	IEEE/OSA Journal of Display Technology
卷	10
發行號	3
DOIs	https://doi.org/10.1109/JDT.2013.2293767
出版狀態	Published - 2014 3月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1109/JDT.2013.2293767

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abstract = "GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.",

author = "Chen, {P. H.} and Kuo, {Cheng Huang} and Lai, {W. C.} and Chen, {Yu An} and Chang, {L. C.} and Chang, {S. J.}",

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AU - Chen, P. H.

AU - Kuo, Cheng Huang

AU - Lai, W. C.

AU - Chen, Yu An

AU - Chang, L. C.

AU - Chang, S. J.

PY - 2014/3

Y1 - 2014/3

N2 - GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

AB - GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

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JF - IEEE/OSA Journal of Display Technology

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ER -

GaN-Based light-emitting-diode with a p-InGaN layer

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