GaN-based light-emitting diode with sputtered AlN nucleation layer

Cheng Hsiung Yen, Wei-Chi Lai, Ya Yu Yang, Chun Kai Wang, Tsun Kai Ko, Schang Jing Hon, Shoou-Jinn Chang

研究成果: Article

41 引文 (Scopus)

摘要

The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.

原文English
文章編號6092445
頁(從 - 到)294-296
頁數3
期刊IEEE Photonics Technology Letters
24
發行號4
DOIs
出版狀態Published - 2012 二月 6

指紋

Light emitting diodes
Nucleation
light emitting diodes
nucleation
Leakage currents
leakage
X rays
Crystals
output
curves
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Yen, Cheng Hsiung ; Lai, Wei-Chi ; Yang, Ya Yu ; Wang, Chun Kai ; Ko, Tsun Kai ; Hon, Schang Jing ; Chang, Shoou-Jinn. / GaN-based light-emitting diode with sputtered AlN nucleation layer. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 4. 頁 294-296.
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GaN-based light-emitting diode with sputtered AlN nucleation layer. / Yen, Cheng Hsiung; Lai, Wei-Chi; Yang, Ya Yu; Wang, Chun Kai; Ko, Tsun Kai; Hon, Schang Jing; Chang, Shoou-Jinn.

於: IEEE Photonics Technology Letters, 卷 24, 編號 4, 6092445, 06.02.2012, p. 294-296.

研究成果: Article

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AU - Hon, Schang Jing

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