GaN-based light-emitting diode with sputtered AlN nucleation layer

Cheng Hsiung Yen, Wei Chih Lai, Ya Yu Yang, Chun Kai Wang, Tsun Kai Ko, Schang Jing Hon, Shoou Jinn Chang

研究成果: Article同行評審

44 引文 斯高帕斯(Scopus)

摘要

The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced the (002) and (102) X-ray rocking curve widths of the GaN layer from 318.0 to 201.1 and 412.5 to 225.0 arcsec, respectively. The rm 20-V reverse leakage current of the LEDs with the sputtered AlN nucleation layer is about three orders less than that of the LEDs with the in situ AlN nucleation layer. In addition, the LEDs with sputtered AlN nucleation layer could sustain more than 60% passing yield on the ESD test of under a -600-V machine mode, whereas the LEDs with the in situ AlN nucleation layer sustained less than 40% passing yield. Moreover, the 20-mA output power of the LEDs with the sputtered AlN nucleation layer also improved by approximately 5.73% compared with that of the LEDs with the in situ AlN nucleation layer.

原文English
文章編號6092445
頁(從 - 到)294-296
頁數3
期刊IEEE Photonics Technology Letters
24
發行號4
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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