GaN-based light-emitting diodes on electrochemically etched n --GaN template

Wei Chih Lai, Cheng Hsiung Yen, Jhen Zih Li, Ya Yu Yang, Hsyi En Cheng, Shoou Jinn Chang, Shuguang Li

研究成果: Article

4 引文 (Scopus)

摘要

We report the fabrication of GaN-based light-emitting diodes (LEDs) with embedded reshaped ellipsoidal voids using an electrochemically etched n --GaN template. It is found that the size of the reshaped ellipsoidal voids is strongly related to the initial diameter of the horizontal/tree- branch-like pores in the n--GaN and the bias of electrochemical etching. It is also found that the forward voltage of the LEDs on such templates does not increase drastically. The reverse leakage current, however, increases with increasing electrochemical etching bias of the n--GaN template. Furthermore, it is found that light output power at 20 mA is 50% higher for such LEDs, as compared with conventional LEDs.

原文English
文章編號6548046
頁(從 - 到)1531-1534
頁數4
期刊IEEE Photonics Technology Letters
25
發行號15
DOIs
出版狀態Published - 2013 八月 5

指紋

Light emitting diodes
light emitting diodes
templates
Electrochemical etching
voids
etching
Leakage currents
leakage
porosity
Fabrication
fabrication
output
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Lai, Wei Chih ; Yen, Cheng Hsiung ; Li, Jhen Zih ; Yang, Ya Yu ; Cheng, Hsyi En ; Chang, Shoou Jinn ; Li, Shuguang. / GaN-based light-emitting diodes on electrochemically etched n --GaN template. 於: IEEE Photonics Technology Letters. 2013 ; 卷 25, 編號 15. 頁 1531-1534.
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abstract = "We report the fabrication of GaN-based light-emitting diodes (LEDs) with embedded reshaped ellipsoidal voids using an electrochemically etched n --GaN template. It is found that the size of the reshaped ellipsoidal voids is strongly related to the initial diameter of the horizontal/tree- branch-like pores in the n--GaN and the bias of electrochemical etching. It is also found that the forward voltage of the LEDs on such templates does not increase drastically. The reverse leakage current, however, increases with increasing electrochemical etching bias of the n--GaN template. Furthermore, it is found that light output power at 20 mA is 50{\%} higher for such LEDs, as compared with conventional LEDs.",
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GaN-based light-emitting diodes on electrochemically etched n --GaN template. / Lai, Wei Chih; Yen, Cheng Hsiung; Li, Jhen Zih; Yang, Ya Yu; Cheng, Hsyi En; Chang, Shoou Jinn; Li, Shuguang.

於: IEEE Photonics Technology Letters, 卷 25, 編號 15, 6548046, 05.08.2013, p. 1531-1534.

研究成果: Article

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T1 - GaN-based light-emitting diodes on electrochemically etched n --GaN template

AU - Lai, Wei Chih

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AU - Cheng, Hsyi En

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AB - We report the fabrication of GaN-based light-emitting diodes (LEDs) with embedded reshaped ellipsoidal voids using an electrochemically etched n --GaN template. It is found that the size of the reshaped ellipsoidal voids is strongly related to the initial diameter of the horizontal/tree- branch-like pores in the n--GaN and the bias of electrochemical etching. It is also found that the forward voltage of the LEDs on such templates does not increase drastically. The reverse leakage current, however, increases with increasing electrochemical etching bias of the n--GaN template. Furthermore, it is found that light output power at 20 mA is 50% higher for such LEDs, as compared with conventional LEDs.

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