GaN-based light-emitting diodes on electrochemically etched n --GaN template

Wei Chih Lai, Cheng Hsiung Yen, Jhen Zih Li, Ya Yu Yang, Hsyi En Cheng, Shoou Jinn Chang, Shuguang Li

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of GaN-based light-emitting diodes (LEDs) with embedded reshaped ellipsoidal voids using an electrochemically etched n --GaN template. It is found that the size of the reshaped ellipsoidal voids is strongly related to the initial diameter of the horizontal/tree- branch-like pores in the n--GaN and the bias of electrochemical etching. It is also found that the forward voltage of the LEDs on such templates does not increase drastically. The reverse leakage current, however, increases with increasing electrochemical etching bias of the n--GaN template. Furthermore, it is found that light output power at 20 mA is 50% higher for such LEDs, as compared with conventional LEDs.

原文English
文章編號6548046
頁(從 - 到)1531-1534
頁數4
期刊IEEE Photonics Technology Letters
25
發行號15
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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