GaN-based light-emitting diodes prepared on vicinal sapphire substrates

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, Y. C. Cheng, W. J. Lin

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the LEDs with vicinal cut sapphire substrate. With 20mA current injection, it is found that 44 electroluminescence intensity enhancement can be achieved by using the 1° tilted sapphire substrate.

原文English
頁(從 - 到)23-26
頁數4
期刊IET Optoelectronics
1
發行號1
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程

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