GaN-Based Light-Emitting Diodes Prepared with Shifted Laser Stealth Dicing

Shoou Jinn Chang Chang, L. M. Chang, J. Y. Chen, C. S. Hsu, D. S. Kuo, C. F. Shen, Wei Shou Chen, T. K. Ko

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate.

原文English
文章編號7264979
頁(從 - 到)195-199
頁數5
期刊Journal of Display Technology
12
發行號2
DOIs
出版狀態Published - 2016 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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