GaN-based light-emitting diodes with AlGaN strain compensation buffer layer

Shoou Jinn Chang, Lucent Lu, Yu Yao Lin, Shuguang Li

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.

原文English
文章編號6542634
頁(從 - 到)910-914
頁數5
期刊IEEE/OSA Journal of Display Technology
9
發行號11
DOIs
出版狀態Published - 2013 十一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「GaN-based light-emitting diodes with AlGaN strain compensation buffer layer」主題。共同形成了獨特的指紋。

引用此