TY - JOUR
T1 - GaN-based light-emitting diodes with AlGaN strain compensation buffer layer
AU - Chang, Shoou Jinn
AU - Lu, Lucent
AU - Lin, Yu Yao
AU - Li, Shuguang
PY - 2013/11
Y1 - 2013/11
N2 - An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.
AB - An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.
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U2 - 10.1109/JDT.2013.2269477
DO - 10.1109/JDT.2013.2269477
M3 - Article
AN - SCOPUS:84890811926
SN - 1551-319X
VL - 9
SP - 910
EP - 914
JO - IEEE/OSA Journal of Display Technology
JF - IEEE/OSA Journal of Display Technology
IS - 11
M1 - 6542634
ER -