GaN-based light-emitting diodes with embedded air void arrays

Yue Shen, Shuguang Li, De Shan Kuo, Shoou Jinn Chang, Kin Tak Lam, Kuo Hsun Wen

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

原文English
文章編號041207
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
30
發行號4
DOIs
出版狀態Published - 2012 七月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此