GaN-based light-emitting diodes with embedded air void arrays

Yue Shen, Shuguang Li, De Shan Kuo, Shoou Jinn Chang, Kin Tak Lam, Kuo Hsun Wen

研究成果: Article

2 引文 (Scopus)

摘要

The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

原文English
文章編號041207
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
30
發行號4
DOIs
出版狀態Published - 2012 七月

指紋

Light emitting diodes
voids
light emitting diodes
air
Air
Epitaxial layers
Coalescence
Photons
Scattering
embedding
coalescing
augmentation
output
photons
scattering
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Shen, Yue ; Li, Shuguang ; Kuo, De Shan ; Chang, Shoou Jinn ; Lam, Kin Tak ; Wen, Kuo Hsun. / GaN-based light-emitting diodes with embedded air void arrays. 於: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2012 ; 卷 30, 編號 4.
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GaN-based light-emitting diodes with embedded air void arrays. / Shen, Yue; Li, Shuguang; Kuo, De Shan; Chang, Shoou Jinn; Lam, Kin Tak; Wen, Kuo Hsun.

於: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 卷 30, 編號 4, 041207, 07.2012.

研究成果: Article

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