GaN-based light-emitting diodes with embedded air void arrays

Yue Shen, Shuguang Li, De Shan Kuo, Shoou Jinn Chang, Kin Tak Lam, Kuo Hsun Wen

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

原文English
文章編號041207
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
30
發行號4
DOIs
出版狀態Published - 2012 七月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

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