GaN-based light-emitting diodes with embedded air void arrays

Yue Shen; Shuguang Li; De Shan Kuo; Shoou Jinn Chang; Kin Tak Lam; Kuo Hsun Wen

doi:10.1116/1.4730028

GaN-based light-emitting diodes with embedded air void arrays

Yue Shen
, Shuguang Li
, De Shan Kuo
, Shoou Jinn Chang
, Kin Tak Lam
, Kuo Hsun Wen

微電子工程研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

原文	English
文章編號	041207
期刊	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
卷	30
發行號	4
DOIs	https://doi.org/10.1116/1.4730028
出版狀態	Published - 2012 7月

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
製程化學與技術
表面、塗料和薄膜
電氣與電子工程
材料化學

存取文件

10.1116/1.4730028

其它文件與鏈接

引用此

@article{0340c2e230ae40ddb6889fa5c7c893e2,

title = "GaN-based light-emitting diodes with embedded air void arrays",

abstract = "The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56\% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.",

author = "Yue Shen and Shuguang Li and Kuo, \{De Shan\} and Chang, \{Shoou Jinn\} and Lam, \{Kin Tak\} and Wen, \{Kuo Hsun\}",

note = "Funding Information: This work was granted in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU) under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 100-D0204-6, and the LED Lighting and Research Center, NCKU for the assistance in LED related measurements.",

year = "2012",

month = jul,

doi = "10.1116/1.4730028",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - GaN-based light-emitting diodes with embedded air void arrays

AU - Shen, Yue

AU - Li, Shuguang

AU - Kuo, De Shan

AU - Chang, Shoou Jinn

AU - Lam, Kin Tak

AU - Wen, Kuo Hsun

N1 - Funding Information: This work was granted in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU) under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 100-D0204-6, and the LED Lighting and Research Center, NCKU for the assistance in LED related measurements.

PY - 2012/7

Y1 - 2012/7

N2 - The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

AB - The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard's-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.

UR - https://www.scopus.com/pages/publications/84864187190

UR - https://www.scopus.com/pages/publications/84864187190#tab=citedBy

U2 - 10.1116/1.4730028

DO - 10.1116/1.4730028

M3 - Article

AN - SCOPUS:84864187190

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 4

M1 - 041207

ER -

GaN-based light-emitting diodes with embedded air void arrays

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此