GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Wei Chih Lai, Ya Yu Yang, Li Chi Peng, Shih Wei Yang, Yu Ru Lin, Jinn Kong Sheu

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

We demonstrated GaN-based light emitting diodes (LEDs) with different embedded heights of SiO2 pillars and air gap array structures. The air gap on top of the SiO2 pillars were also realized using the enhanced epitaxial lateral overgrowth mode. With the embedded SiO2 pillars and air gap array structures, we achieved a smaller reverse leakage current due to the lateral growth-induced crystal quality improvement. Moreover, under 20 mA current injections, the output powers were 3.04, 4.23, 4.66, and 4.44 mW for conventional LED, LEDs with embedded 200 and 500 nm height of SiO2 pillars and air gaps, 500 nm height of SiO2 pillars and air gaps, and 700 and 400 nm height of SiO2 pillars and air gaps, respectively. We found that the embedded 500 nm height SiO2 pillars and 500 nm height air gap array structures could enhance LED output power by more than 50% due to the enhanced guided-light scattering efficiency in our study.

原文English
文章編號081103
期刊Applied Physics Letters
97
發行號8
DOIs
出版狀態Published - 2010 八月 23

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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