GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Wei Chih Lai; Chih Nan Lin; Yi Chun Lai; Peichen Yu; Gou Chung Chi; Shoou Jinn Chang

doi:10.1364/OE.22.00A396

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Wei Chih Lai, Chih Nan Lin, Yi Chun Lai, Peichen Yu, Gou Chung Chi, Shoou Jinn Chang

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

原文	English
頁（從 - 到）	A396-A401
期刊	Optics Express
卷	22
發行號	5
DOIs	https://doi.org/10.1364/OE.22.00A396
出版狀態	Published - 2014 3月 10

All Science Journal Classification (ASJC) codes

原子與分子物理與光學

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10.1364/OE.22.00A396

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title = "GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer",

abstract = "We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.",

author = "Lai, {Wei Chih} and Lin, {Chih Nan} and Lai, {Yi Chun} and Peichen Yu and Chi, {Gou Chung} and Chang, {Shoou Jinn}",

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T1 - GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

AU - Lai, Wei Chih

AU - Lin, Chih Nan

AU - Lai, Yi Chun

AU - Yu, Peichen

AU - Chi, Gou Chung

AU - Chang, Shoou Jinn

PY - 2014/3/10

Y1 - 2014/3/10

N2 - We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

AB - We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

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GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

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