GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Wei Chih Lai, Chih Nan Lin, Yi Chun Lai, Peichen Yu, Gou Chung Chi, Shoou Jinn Chang

研究成果: Article

15 引文 (Scopus)

摘要

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

原文English
頁(從 - 到)A396-A401
期刊Optics Express
22
發行號5
DOIs
出版狀態Published - 2014 三月 10

指紋

gallium nitrides
indium oxides
tin oxides
graphene
light emitting diodes
contact resistance
annealing
augmentation
output
electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Lai, Wei Chih ; Lin, Chih Nan ; Lai, Yi Chun ; Yu, Peichen ; Chi, Gou Chung ; Chang, Shoou Jinn. / GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer. 於: Optics Express. 2014 ; 卷 22, 編號 5. 頁 A396-A401.
@article{c773fdf3ec9142c8bca321796d993848,
title = "GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer",
abstract = "We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11{\%} on LEDs with graphene/ITO transparent contact.",
author = "Lai, {Wei Chih} and Lin, {Chih Nan} and Lai, {Yi Chun} and Peichen Yu and Chi, {Gou Chung} and Chang, {Shoou Jinn}",
year = "2014",
month = "3",
day = "10",
doi = "10.1364/OE.22.00A396",
language = "English",
volume = "22",
pages = "A396--A401",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "5",

}

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer. / Lai, Wei Chih; Lin, Chih Nan; Lai, Yi Chun; Yu, Peichen; Chi, Gou Chung; Chang, Shoou Jinn.

於: Optics Express, 卷 22, 編號 5, 10.03.2014, p. A396-A401.

研究成果: Article

TY - JOUR

T1 - GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

AU - Lai, Wei Chih

AU - Lin, Chih Nan

AU - Lai, Yi Chun

AU - Yu, Peichen

AU - Chi, Gou Chung

AU - Chang, Shoou Jinn

PY - 2014/3/10

Y1 - 2014/3/10

N2 - We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

AB - We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

UR - http://www.scopus.com/inward/record.url?scp=84896373645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896373645&partnerID=8YFLogxK

U2 - 10.1364/OE.22.00A396

DO - 10.1364/OE.22.00A396

M3 - Article

AN - SCOPUS:84896373645

VL - 22

SP - A396-A401

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 5

ER -