GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Wei Chih Lai, Chih Nan Lin, Yi Chun Lai, Peichen Yu, Gou Chung Chi, Shoou Jinn Chang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm2) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

原文English
頁(從 - 到)A396-A401
期刊Optics Express
22
發行號5
DOIs
出版狀態Published - 2014 三月 10

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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