GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

Cheng Huang Kuo, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jone F. Chen, Jinn Kong Sheu, Ji Ming Tsai

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

原文English
頁(從 - 到)2270-2272
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號4 B
DOIs
出版狀態Published - 2003 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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