GaN-based light-emitting diodes with staircase electron injector structure

Shoou-Jinn Chang, Yu Yao Lin

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.

原文English
文章編號6670698
頁(從 - 到)162-166
頁數5
期刊IEEE/OSA Journal of Display Technology
10
發行號2
DOIs
出版狀態Published - 2014 二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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