TY - JOUR
T1 - GaN-based light-emitting diodes with staircase electron injector structure
AU - Chang, Shoou Jinn
AU - Lin, Yu Yao
PY - 2014/2
Y1 - 2014/2
N2 - The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.
AB - The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.
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U2 - 10.1109/JDT.2013.2291776
DO - 10.1109/JDT.2013.2291776
M3 - Article
AN - SCOPUS:84896828890
SN - 1551-319X
VL - 10
SP - 162
EP - 166
JO - IEEE/OSA Journal of Display Technology
JF - IEEE/OSA Journal of Display Technology
IS - 2
M1 - 6670698
ER -