GaN-based light emitting diodes with two-step grown GaN quantum barriers

Kin Tak Lam, Wei Heng Lin, Shoou Jinn Chang

研究成果: Article同行評審

摘要

The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.

原文English
頁(從 - 到)1451-1453
頁數3
期刊Science of Advanced Materials
8
發行號7
DOIs
出版狀態Published - 2016 七月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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