The authors propose the use of two-step growth method to prepare the quantum barriers (QBs) of GaN-based light-emitting diodes (LEDs). Using this method, it was found that we could achieve higher indium composition in the InGaN well layers and reduce threading dislocation gliding during the growth. With 1000 mA current injection, it was found that we could enhance the LED output power from 672.8 to 775.0 mW and reduce the forward voltage from 7.04 to 6.71 volt by reducing the triethylgallium (TEGa) flow rate from 400 sccm to 50 sccm. Furthermore, it was found that LEDs with two-step grown QBs could effectively alleviate the efficiency droop.
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