GaN-based metal-oxide-semiconductor field-effect transistors

Ching Ting Lee, Ya Lan Chou

研究成果: Conference contribution

摘要

Various fabrication processes including (NH4)2Sx surface treatment and photoelectrochemical oxidation were used to fabricate GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The DC performances, high frequency performances and noise performances of the resulting GaN-based planer and gate-recessed MOS-HEMTs were measured. In view of the nearly similar lattice constant and the same wurtize crystalline structure between ZnO and GaN-based semiconductor, the ZnO insulator was deposited on the GaN-based epitaxial layers of the HEMTs using a vapor cooling condensation system. The ZnO insulator was used as the gate insulator of the GaN-based MOS-HEMTs. The performances of the ZnO/GaN-based MOS-HEMTs were also measured.

原文English
主出版物標題Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
編輯Jia Zhou, Ting-Ao Tang
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479932962
DOIs
出版狀態Published - 2014 一月 23
事件2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
持續時間: 2014 十月 282014 十月 31

出版系列

名字Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
國家/地區China
城市Guilin
期間14-10-2814-10-31

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程
  • 電腦科學應用

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