GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication

Jhih Min Wun, Che Wei Lin, Wei Chen, J. K. Sheu, Ching Liang Lin, Yun Li Li, John E. Bowers, Jin Wei Shi, Juri Vinogradov, Roman Kruglov, Olaf Ziemann

研究成果: Article同行評審

45 引文 斯高帕斯(Scopus)

摘要

We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire (PS) substrate as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. To further enhance the external quantum efficiency (EQE) and output power of this miniaturized high-speed LED, a LED with a PS substrate is adopted. Furthermore, by greatly reducing the number of active In xGa 1-xN/GaN multiple quantum wells (MQWs) to four and minimizing the device active area, we can achieve a record-high electrical-to-optical (E-O) bandwidth (as high as 400 MHz) among all the reported high-speed visible LEDs under a very small dc bias current (40 mA). The fiber coupling efficiency has been improved in 4 dB using lens with a 500-μm diameter mounted on the LED chip. Thus, the maximum fiber-coupled power was-2.67 dBm at the bias current of 40 mA. The 1.07-Gb/s data transmissions over a 50-m SI-POF fiber have been successfully demonstrated using this device at the bias current of 40 mA.

原文English
文章編號6255750
頁(從 - 到)1520-1529
頁數10
期刊IEEE Photonics Journal
4
發行號5
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程

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