GaN-based MSM photodetectors prepared on patterned sapphire substrates

Shoou Jinn Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, L. W. Wu

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.

原文English
頁(從 - 到)1866-1868
頁數3
期刊IEEE Photonics Technology Letters
20
發行號22
DOIs
出版狀態Published - 2008 十一月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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