GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions

Shoou Jinn Chang, Wei Heng Lin, Chun Ta Yu

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with tunnel-junction (TJ)-cascaded active region. It was found from X-ray diffraction spectra that crystal quality of the TJ LED was almost identical to that of the conventional LED. Compared with the conventional LED, it was found that we could achieve 35% higher output power from the TJ LED due to the repeated use of electrons and holes for photon generation. It was also found that the external quantum efficiency drooped by 26.3% and 18.7% for the TJ LED and the conventional LED, respectively, as we increased the injection current density to 80 A/cm2. Furthermore, it was found that forward voltages measured with an injection current density of 20 A/cm2 were 8.94 V for the TJ LED. The large forward voltage observed from the TJ LED should be attributed to the large TJ resistance.

原文English
文章編號7024909
頁(從 - 到)366-368
頁數3
期刊IEEE Electron Device Letters
36
發行號4
DOIs
出版狀態Published - 2015 四月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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