GaN-based p-i-n sensors with ITO contacts

Shoou-Jinn Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, Jinn-Kong Sheu, Wei-Chi Lai, Yu-Cheng Lin, W. S. Chen, C. F. Shen

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.

原文English
頁(從 - 到)406-409
頁數4
期刊IEEE Sensors Journal
6
發行號2
DOIs
出版狀態Published - 2006 四月

All Science Journal Classification (ASJC) codes

  • 儀器
  • 電氣與電子工程

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