GaN-based p-type metal-oxide-semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Ya Lan Chiou, Li Hsien Huang, Ching Ting Lee

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this work, a bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide insulator for GaN-based p-type metal-oxide- semiconductor (MOS) devices. The inversion breakdown and accumulation breakdown fields of the resulting GaN p-type MOS devices were 11.6 MV cm-1 and 3.7 MV cm-1, respectively. The interface-state density of the GaN p-type MOS devices was 4.18 × 1011 cm-2 eV -1 obtained by a photo-assisted capacitance-voltage measurement method. In addition, the negative fixed oxide charge of 2.4 × 10 12 cm-2 eV-1 was also estimated.

原文English
文章編號045020
期刊Semiconductor Science and Technology
25
發行號4
DOIs
出版狀態Published - 2010 四月 23

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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