In this work, a bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide insulator for GaN-based p-type metal-oxide- semiconductor (MOS) devices. The inversion breakdown and accumulation breakdown fields of the resulting GaN p-type MOS devices were 11.6 MV cm-1 and 3.7 MV cm-1, respectively. The interface-state density of the GaN p-type MOS devices was 4.18 × 1011 cm-2 eV -1 obtained by a photo-assisted capacitance-voltage measurement method. In addition, the negative fixed oxide charge of 2.4 × 10 12 cm-2 eV-1 was also estimated.
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