GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure

Jinn Kong Sheu, Fu Bang Chen, Wei Yu Yen, Yen Chin Wang, Chun Nan Liu, Yu Hsiang Yeh, Ming Lun Lee

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with verticalconduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

原文English
頁(從 - 到)A371-A381
期刊Optics Express
23
發行號7
DOIs
出版狀態Published - 2015 四月 6

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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