GaN-based planar p-i-n photodetectors with the be-implanted isolation ring

Jei Li Hou, Shoou Jinn Chang, Meng Chu Chen, C. H. Liu, Ting Jen Hsueh, Jinn Kong Sheu, Shuguang Li

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of GaN-based planar p-i-n photodetectors (PDs) with and without the Be-implanted isolation ring. With the isolation ring, we achieved a much smaller leakage current below 10 pA. It was also found that the responsivity for the PD with the Be-implanted isolation ring was almost independent of the applied reverse bias. Furthermore, it was found that we could achieve a bias independent and much larger ultraviolet-to-visible rejection ratio to three orders of magnitude. Furthermore, smaller noise-equivalent-power value 8.18 \times \hbox{10}^{-16}\ \hbox{W}$ and larger detectivity 3.2 \times \hbox{10}^{13}\ \hbox{cm}\cdot\hbox{Hz}^{0.5}\cdot \hbox{W}-1 from the PD with the Be-implanted isolation ring.

原文English
文章編號6423883
頁(從 - 到)1178-1182
頁數5
期刊IEEE Transactions on Electron Devices
60
發行號3
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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