GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu, Shoou Jinn Chang

研究成果: Article

11 引文 (Scopus)

摘要

The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

原文English
文章編號5405053
頁(從 - 到)433-437
頁數5
期刊IEEE Transactions on Advanced Packaging
33
發行號2
DOIs
出版狀態Published - 2010 五月 1

指紋

Electrostatic discharge
Light emitting diodes
Diodes
Fabrication
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Sun, Y. X. ; Chen, W. S. ; Hung, S. C. ; Lam, K. T. ; Liu, C. H. ; Chang, Shoou Jinn. / GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount. 於: IEEE Transactions on Advanced Packaging. 2010 ; 卷 33, 編號 2. 頁 433-437.
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abstract = "The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90{\%} of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25{\%} of the LEDs can even endure 20000 V reverse ESD stressing.",
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GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount. / Sun, Y. X.; Chen, W. S.; Hung, S. C.; Lam, K. T.; Liu, C. H.; Chang, Shoou Jinn.

於: IEEE Transactions on Advanced Packaging, 卷 33, 編號 2, 5405053, 01.05.2010, p. 433-437.

研究成果: Article

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AU - Liu, C. H.

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AB - The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

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