GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount

Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu, Shoou Jinn Chang

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The authors demonstrate the fabrication of 1 mm × 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

原文English
文章編號5405053
頁(從 - 到)433-437
頁數5
期刊IEEE Transactions on Advanced Packaging
33
發行號2
DOIs
出版狀態Published - 2010 五月

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「GaN-based power flip-chip LEDs with an internal esd protection diode on cu sub-mount」主題。共同形成了獨特的指紋。

引用此