@article{b9ecd30734f84c729af478776162f6e3,
title = "GaN-based power flip-chip LEDs with Cu submount",
abstract = "Nitride-based power flip-chip (FC) LEDs with Cu submount were proposed and prepared. With a much higher thermal conductivity, it was found that we can achieve a lower operation voltage under high-current injections and lower junction temperature from the FC LEDs with Cu submount. Compared with the power FC LEDs with Si submount, the reliability of the proposed device was also better.",
author = "Chang, {S. J.} and Chen, {W. S.} and Shei, {S. C.} and Shen, {C. F.} and Ko, {T. K.} and Tsai, {J. M.} and Lai, {W. C.} and Sheu, {J. K.} and Lin, {A. J.} and Hung, {S. C.}",
note = "Funding Information: Manuscript received November 19, 2008; revised December 14, 2008. First published February 27, 2009; current version published August 5, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan, under Grant D97-2700, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
doi = "10.1109/JSTQE.2009.2014172",
language = "English",
volume = "15",
pages = "1287--1291",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}