GaN-based power flip-chip LEDs with SILAR and hydrothermal ZnO nanorods

Shoou Jinn Chang, Nan Ming Lin, Shih Chang Shei

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a simple and low-cost method combined successive ionic layer adsorption and reaction with Hydrothermal to form ZnO nanorods for GaN-based power flip-chip light-emitting diodes (LEDs). With 350-mA current injection, it was found that forward voltages were all 2.97 V when the 350-mA output powers were 361.7, 420.7, 426.8, 448.2, and 430.4 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. It was also found that the light output power of LED IV was 24% larger than that of LED I. Furthermore, it was also found that the formation of ZnO nanorods on the top of sapphire will not degrade the electrical properties.

原文English
文章編號6975033
頁(從 - 到)431-435
頁數5
期刊IEEE Journal of Selected Topics in Quantum Electronics
21
發行號4
DOIs
出版狀態Published - 2015 七月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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