GaN-based power LEDs with CMOS ESD protection circuits

J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen, S. C. Shei

研究成果: Article

14 引文 斯高帕斯(Scopus)

摘要

A power light-emitting diode (LED) module has been successfully designed and demonstrated by combining GaN-based power LEDs with CMOS electrostatic discharge (ESD) protection circuits through a flip-chip process. It was found that we could enhance the power LED output intensity by 20% by using the flip-chip technology. Lifetimes of flip-chip power LEDs were also found to be better. It was also found that the use of CMOS ESD protection circuits did not degrade the output intensity and lifetime of flip-chip power LEDs. Furthermore, it was found that we could not only significantly enhance the reverse ESD characteristics but could also enhance the positive ESD characteristics of nitride-based LEDs by using the CMOS ESD protection circuits.

原文English
頁(從 - 到)340-346
頁數7
期刊IEEE Transactions on Device and Materials Reliability
7
發行號2
DOIs
出版狀態Published - 2007 六月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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