GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed bragg reflectors

Chih Chien Lin, Ching Ting Lee

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a FabryProt resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO 2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.

原文English
文章編號5492161
頁(從 - 到)1291-1293
頁數3
期刊IEEE Photonics Technology Letters
22
發行號17
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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