A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN-GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5-pair AlGaN-GaN intermediate layer. For our device biased at -5V, the responsivity at 360nm was found to be 0.26A/W and the UV-to-visible rejection ratio was estimated to be 1.83Ã - 10 4. At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00Ã - 10 -9W and 1.45Ã - 10 9cmHz 0.5W -1, respectively. This indicates a simple and effective way to fabricate high-performance PDs for UV detection.
|頁（從 - 到）||579-584|
|期刊||Physica Status Solidi (A) Applications and Materials Science|
|出版狀態||Published - 2012 三月|
All Science Journal Classification (ASJC) codes