GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer

Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang, San Lein Wu

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN-GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5-pair AlGaN-GaN intermediate layer. For our device biased at -5V, the responsivity at 360nm was found to be 0.26A/W and the UV-to-visible rejection ratio was estimated to be 1.83Ã - 10 4. At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00Ã - 10 -9W and 1.45Ã - 10 9cmHz 0.5W -1, respectively. This indicates a simple and effective way to fabricate high-performance PDs for UV detection.

原文English
頁(從 - 到)579-584
頁數6
期刊Physica Status Solidi (A) Applications and Materials Science
209
發行號3
DOIs
出版狀態Published - 2012 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer」主題。共同形成了獨特的指紋。

引用此