GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer

W. C. Lai, C. H. Yen, Y. Y. Yang, C. K. Wang, S. J. Chang

研究成果: Article

13 引文 (Scopus)

摘要

We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than that of UV LEDs with GaN nucleation layers. In addition, the enhanced power output of UV LEDs with ex situ AlN nucleation could reach around 52% in magnitude at peak emission wavelengths of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers. Furthermore, UV LEDs with ex situ AlN nucleation show improved reliability. The UV LEDs with ex situ AlN nucleation layer revealed a power output drop of around 9% within 168 hours , which is less than the around 14% power drop of UV LEDs with GaN nucleation layer.

原文English
文章編號6522544
頁(從 - 到)895-899
頁數5
期刊IEEE/OSA Journal of Display Technology
9
發行號11
DOIs
出版狀態Published - 2013 六月 6

指紋

Gallium nitride
Aluminum nitride
gallium nitrides
aluminum nitrides
ultraviolet radiation
Light emitting diodes
Nucleation
light emitting diodes
nucleation
output
Ultraviolet Rays
gallium nitride
aluminum nitride
Wavelength
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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abstract = "We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than that of UV LEDs with GaN nucleation layers. In addition, the enhanced power output of UV LEDs with ex situ AlN nucleation could reach around 52{\%} in magnitude at peak emission wavelengths of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers. Furthermore, UV LEDs with ex situ AlN nucleation show improved reliability. The UV LEDs with ex situ AlN nucleation layer revealed a power output drop of around 9{\%} within 168 hours , which is less than the around 14{\%} power drop of UV LEDs with GaN nucleation layer.",
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GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer. / Lai, W. C.; Yen, C. H.; Yang, Y. Y.; Wang, C. K.; Chang, S. J.

於: IEEE/OSA Journal of Display Technology, 卷 9, 編號 11, 6522544, 06.06.2013, p. 895-899.

研究成果: Article

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AU - Lai, W. C.

AU - Yen, C. H.

AU - Yang, Y. Y.

AU - Wang, C. K.

AU - Chang, S. J.

PY - 2013/6/6

Y1 - 2013/6/6

N2 - We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than that of UV LEDs with GaN nucleation layers. In addition, the enhanced power output of UV LEDs with ex situ AlN nucleation could reach around 52% in magnitude at peak emission wavelengths of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers. Furthermore, UV LEDs with ex situ AlN nucleation show improved reliability. The UV LEDs with ex situ AlN nucleation layer revealed a power output drop of around 9% within 168 hours , which is less than the around 14% power drop of UV LEDs with GaN nucleation layer.

AB - We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than that of UV LEDs with GaN nucleation layers. In addition, the enhanced power output of UV LEDs with ex situ AlN nucleation could reach around 52% in magnitude at peak emission wavelengths of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers. Furthermore, UV LEDs with ex situ AlN nucleation show improved reliability. The UV LEDs with ex situ AlN nucleation layer revealed a power output drop of around 9% within 168 hours , which is less than the around 14% power drop of UV LEDs with GaN nucleation layer.

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