GaN epitaxial layers prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

研究成果: Article同行評審

摘要

We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhibits both cubic and hexagonal phases. It was also found that threading dislocation observed from GaN prepared on nano-patterned Si(001) substrate was significantly smaller than that prepared on conventional unpatterned Si(111) substrate. Furthermore, it was found that we can reduce the tensile stress in GaN epitaxial layer by about 78% using the nano-patterned Si(001) substrate.

原文English
頁(從 - 到)1248-1251
頁數4
期刊Journal of Nanoscience and Nanotechnology
11
發行號2
DOIs
出版狀態Published - 2011 二月

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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