GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

C. C. Huang, S. J. Chang, R. W. Chuang, J. C. Lin, Y. C. Cheng, W. J. Lin

研究成果: Article

16 引文 (Scopus)

摘要

The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 °C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission electron microscopy, it was found that the high-temperature step-graded AlGaN intermediate layers can effectively reduce the tensile stress on GaN epitaxial layers. Photoluminescence and Raman measurements also indicate that we can improve the crystal quality of GaN by inserting the step-graded AlGaN intermediate layers.

原文English
頁(從 - 到)6367-6370
頁數4
期刊Applied Surface Science
256
發行號21
DOIs
出版狀態Published - 2010 八月 15

指紋

Epitaxial layers
Tensile stress
Photoluminescence
Transmission electron microscopy
Cracks
X ray diffraction
Temperature
Crystals
Substrates
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

Huang, C. C. ; Chang, S. J. ; Chuang, R. W. ; Lin, J. C. ; Cheng, Y. C. ; Lin, W. J. / GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers. 於: Applied Surface Science. 2010 ; 卷 256, 編號 21. 頁 6367-6370.
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GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers. / Huang, C. C.; Chang, S. J.; Chuang, R. W.; Lin, J. C.; Cheng, Y. C.; Lin, W. J.

於: Applied Surface Science, 卷 256, 編號 21, 15.08.2010, p. 6367-6370.

研究成果: Article

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AU - Cheng, Y. C.

AU - Lin, W. J.

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