GaN metal-semiconductor-metal photodetectoi with SiN/GaN nucleation layer

Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu, C. H. Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this paper, GaN metal-semiconductor-metal (MSM) photodetectors with SiN/GaN nucleation layer were proposed and fabricated. Compared with the GaN MSM photodetector with conventional single low-temperature GaN nucleation layer, it was found that we achieved much smaller dark current and much lower bias-dependent photocurrent. We also achieved much lower bias-dependent spectral response and larger ratio of photoresponse at 360-450 nm from the photodetector with SiN/GaN nucleation layer. Furthermore, it was found that we can significantly reduce noise-equivalent power (NEP) and enhance normalized detectivity by using the SiN/GaN nucleation layer.

原文English
文章編號4631457
頁(從 - 到)1693-1697
頁數5
期刊IEEE Sensors Journal
8
發行號10
DOIs
出版狀態Published - 2008 十月

All Science Journal Classification (ASJC) codes

  • 儀器
  • 電氣與電子工程

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