GaN metal-semiconductor-metal photodetectors prepared on nanorod template

Shoou-Jinn Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen

研究成果: Article

9 引文 (Scopus)

摘要

The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

原文English
文章編號14
頁(從 - 到)625-627
頁數3
期刊IEEE Photonics Technology Letters
22
發行號9
DOIs
出版狀態Published - 2010 四月 16

指紋

Photodetectors
Nanorods
nanorods
photometers
templates
Aluminum Oxide
Metals
Semiconductor materials
Sapphire
sapphire
metals
Substrates
Leakage currents
rejection
leakage
Fabrication
Crystals
fabrication
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Chang, Shoou-Jinn ; Wang, S. M. ; Chang, P. C. ; Kuo, C. H. ; Young, S. J. ; Chen, T. P. / GaN metal-semiconductor-metal photodetectors prepared on nanorod template. 於: IEEE Photonics Technology Letters. 2010 ; 卷 22, 編號 9. 頁 625-627.
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GaN metal-semiconductor-metal photodetectors prepared on nanorod template. / Chang, Shoou-Jinn; Wang, S. M.; Chang, P. C.; Kuo, C. H.; Young, S. J.; Chen, T. P.

於: IEEE Photonics Technology Letters, 卷 22, 編號 9, 14, 16.04.2010, p. 625-627.

研究成果: Article

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