@article{3c3d6dc97b6b4d69aa7533d3a028a75f,
title = "GaN metal-semiconductor-metal photodetectors prepared on nanorod template",
abstract = "The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.",
author = "Chang, {S. J.} and Wang, {S. M.} and Chang, {P. C.} and Kuo, {C. H.} and Young, {S. J.} and Chen, {T. P.}",
note = "Funding Information: Manuscript received October 22, 2009; revised December 13, 2009; accepted February 08, 2010. Date of publication February 22, 2010; date of current version April 02, 2010. This work was supported in part by a grant from the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was also supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6.",
year = "2010",
doi = "10.1109/LPT.2010.2043354",
language = "English",
volume = "22",
pages = "625--627",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}