GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, J. M. Tsai

研究成果: Letter

88 引文 斯高帕斯(Scopus)

摘要

Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

原文English
頁(從 - 到)212-214
頁數3
期刊IEEE Electron Device Letters
24
發行號4
DOIs
出版狀態Published - 2003 四月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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