GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with IrPt Contact Electrodes

C. L. Yu, C. H. Chen, S. J. Chang, P. C. Chang

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with IrPt and NiAu Schottky electrodes were fabricated. It was found that room-temperature effective Schottky barrier height was 0.79 eV for IrPt on GaN. It was also found that we could achieve a 60 times smaller dark current and a 20 times larger photocurrent to dark current contrast ratio by using IrPt contact electrodes. With a 5 V applied bias and an incident light wavelength of 350 nm, it was found that measured responsivity was 0.132 AW for the detector with IrPt contact electrodes.

原文English
頁(從 - 到)J71-J72
期刊Journal of the Electrochemical Society
154
發行號2
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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