GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with IrPt Contact Electrodes

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with IrPt and NiAu Schottky electrodes were fabricated. It was found that room-temperature effective Schottky barrier height was 0.79 eV for IrPt on GaN. It was also found that we could achieve a 60 times smaller dark current and a 20 times larger photocurrent to dark current contrast ratio by using IrPt contact electrodes. With a 5 V applied bias and an incident light wavelength of 350 nm, it was found that measured responsivity was 0.132 AW for the detector with IrPt contact electrodes.