摘要
Indium-tin-oxide (ITO) layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, we found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% at 360 nm. GaN-based metal-semiconductor-metal (MSM) photodetectors with ITO transparent contacts were also fabricated. A maximum 0.12-A photocurrent with a photo current to dark current contrast higher than five orders of magnitude during ultraviolet irradiation were obtained for a photodetector annealed at 600 °C. We also found that the maximum photo responsivity at 345 nm is 7.2 and 0.9 A/W when the detector is biased at 5 and 0.5 V, respectively.
原文 | English |
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頁(從 - 到) | 848-850 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 13 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 2001 8月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 電氣與電子工程