We report on a SiO2-Ga2O3 gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using the standard photolithography technique and liftoff technique. The effect of annealing temperature on the SiO2-Ga2O3/n-type GaN MOS devices are investigated. The properties of high breakdown field, low gate leakage current, and low interface state density were obtained for the MOS devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering