GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

研究成果: Article

48 引文 斯高帕斯(Scopus)

摘要

We report on a SiO2-Ga2O3 gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using the standard photolithography technique and liftoff technique. The effect of annealing temperature on the SiO2-Ga2O3/n-type GaN MOS devices are investigated. The properties of high breakdown field, low gate leakage current, and low interface state density were obtained for the MOS devices.

原文English
頁(從 - 到)54-56
頁數3
期刊IEEE Electron Device Letters
24
發行號2
DOIs
出版狀態Published - 2003 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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