GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

研究成果: Article

48 引文 斯高帕斯(Scopus)

指紋 深入研究「GaN MOS device using SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> insulator grown by photoelectrochemical oxidation method」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science