GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer

W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu, S. C. Hung

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.

原文English
頁(從 - 到)504-506
頁數3
期刊IEEE Photonics Technology Letters
21
發行號8
DOIs
出版狀態Published - 2009 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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