@article{fcfa92a7bc584ec59b22783371171cab,
title = "GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer",
abstract = "We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.",
author = "Weng, {W. Y.} and Chang, {S. J.} and Lai, {W. C.} and Hsueh, {T. J.} and Shei, {S. C.} and Zeng, {X. F.} and Wu, {S. L.} and Hung, {S. C.}",
note = "Funding Information: Manuscript received November 16, 2008; revised January 16, 2009. First published February 03, 2009; current version published March 25, 2009. This work was supported by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (Grant D97-2700). This work was also supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
month = apr,
day = "15",
doi = "10.1109/LPT.2009.2013968",
language = "English",
volume = "21",
pages = "504--506",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}