GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

Y. D. Jhou; C. H. Chen; S. J. Chang; Y. K. Su; P. C. Chang; P. C. Chen; H. Hung; C. L. Yu; S. M. Wang; M. H. Wu

doi:10.1016/j.mejo.2005.05.020

GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang, M. H. Wu

微電子工程研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×10³ from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts.

原文	English
頁（從 - 到）	328-331
頁數	4
期刊	Microelectronics Journal
卷	37
發行號	4
DOIs	https://doi.org/10.1016/j.mejo.2005.05.020
出版狀態	Published - 2006 4月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mejo.2005.05.020

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@article{420312b914894ce890d41092f1ec9808,

title = "GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes",

abstract = "Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×103 from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts.",

author = "Jhou, {Y. D.} and Chen, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Chang, {P. C.} and Chen, {P. C.} and H. Hung and Yu, {C. L.} and Wang, {S. M.} and Wu, {M. H.}",

note = "Funding Information: This work is supported by the National Science Council under contract numbers NSC 92-2215-E-230-002 and NSC 93-2215-E-230-001.",

year = "2006",

month = apr,

doi = "10.1016/j.mejo.2005.05.020",

language = "English",

volume = "37",

pages = "328--331",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

AU - Jhou, Y. D.

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chang, P. C.

AU - Chen, P. C.

AU - Hung, H.

AU - Yu, C. L.

AU - Wang, S. M.

AU - Wu, M. H.

N1 - Funding Information: This work is supported by the National Science Council under contract numbers NSC 92-2215-E-230-002 and NSC 93-2215-E-230-001.

PY - 2006/4

Y1 - 2006/4

N2 - Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×103 from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts.

AB - Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×103 from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts.

UR - http://www.scopus.com/inward/record.url?scp=32644438978&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32644438978&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.05.020

DO - 10.1016/j.mejo.2005.05.020

M3 - Article

AN - SCOPUS:32644438978

SN - 0026-2692

VL - 37

SP - 328

EP - 331

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 4

ER -

GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

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