GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer

Chun Kai Wang, Yu Zung Chiou, Shoou Jinn Chang, Wei Chih Lai, Sheng Po Chang, Cheng Hsiung Yen, Chun Chi Hung

研究成果: Article

14 引文 (Scopus)

摘要

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.

原文English
文章編號7093119
頁(從 - 到)4743-4748
頁數6
期刊IEEE Sensors Journal
15
發行號9
DOIs
出版狀態Published - 2015 九月

指紋

Photodetectors
photometers
Nucleation
nucleation
Semiconductor materials
Metals
metals
Crystals
Cathodoluminescence
Dark currents
dark current
cathodoluminescence
Quantum efficiency
crystals
quantum efficiency
Electric properties
Optical properties
electrical properties
Rocks
rocks

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

引用此文

Wang, Chun Kai ; Chiou, Yu Zung ; Chang, Shoou Jinn ; Lai, Wei Chih ; Chang, Sheng Po ; Yen, Cheng Hsiung ; Hung, Chun Chi. / GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer. 於: IEEE Sensors Journal. 2015 ; 卷 15, 編號 9. 頁 4743-4748.
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abstract = "GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.",
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GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer. / Wang, Chun Kai; Chiou, Yu Zung; Chang, Shoou Jinn; Lai, Wei Chih; Chang, Sheng Po; Yen, Cheng Hsiung; Hung, Chun Chi.

於: IEEE Sensors Journal, 卷 15, 編號 9, 7093119, 09.2015, p. 4743-4748.

研究成果: Article

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AU - Yen, Cheng Hsiung

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N2 - GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.

AB - GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.

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