GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Z. D. Huang; W. Y. Weng; S. J. Chang; C. J. Chiu; T. J. Hsueh; W. C. Lai; S. L. Wu

doi:10.1149/1.3589302

GaN MSM UV photodetectors with an Al_0.82In_0.18N intermediate layer

Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai, S. L. Wu

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al_0.82In_0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10^-13 W and 4.95 10¹² cm Hz^0.5 W^-1, respectively, for the PDs with the AlInN intermediate layer.

原文	English
頁（從 - 到）	J221-J224
期刊	Journal of the Electrochemical Society
卷	158
發行號	7
DOIs	https://doi.org/10.1149/1.3589302
出版狀態	Published - 2011

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
表面、塗料和薄膜
電化學
可再生能源、永續發展與環境

UN SDG

此研究成果有助於以下永續發展目標

存取文件

10.1149/1.3589302

其它文件與鏈接

引用此

@article{b442cf6254f9449c94cf7fcab35613bf,

title = "GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer",

abstract = "GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.",

author = "Huang, {Z. D.} and Weng, {W. Y.} and Chang, {S. J.} and Chiu, {C. J.} and Hsueh, {T. J.} and Lai, {W. C.} and Wu, {S. L.}",

year = "2011",

doi = "10.1149/1.3589302",

language = "English",

volume = "158",

pages = "J221--J224",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

AU - Huang, Z. D.

AU - Weng, W. Y.

AU - Chang, S. J.

AU - Chiu, C. J.

AU - Hsueh, T. J.

AU - Lai, W. C.

AU - Wu, S. L.

PY - 2011

Y1 - 2011

N2 - GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

AB - GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

UR - http://www.scopus.com/inward/record.url?scp=79957603011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957603011&partnerID=8YFLogxK

U2 - 10.1149/1.3589302

DO - 10.1149/1.3589302

M3 - Article

AN - SCOPUS:79957603011

SN - 0013-4651

VL - 158

SP - J221-J224

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -