GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai, S. L. Wu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)


GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

頁(從 - 到)J221-J224
期刊Journal of the Electrochemical Society
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

指紋 深入研究「GaN MSM UV photodetectors with an Al<sub>0.82</sub>In<sub>0.18</sub>N intermediate layer」主題。共同形成了獨特的指紋。