GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai, S. L. Wu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

原文English
頁(從 - 到)J221-J224
期刊Journal of the Electrochemical Society
158
發行號7
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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