GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai; Shoou Jinn Chang; Wen Yin Weng; Shuguang Li; Shin Liu; Cheng Liang Hsu; Han Ting Hsueh; Ting Jen Hsueh

doi:10.1109/LED.2013.2247558

GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Shuguang Li, Shin Liu, Cheng Liang Hsu, Han Ting Hsueh, Ting Jen Hsueh

微電子工程研究所

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

原文	English
文章編號	6476631
頁（從 - 到）	553-555
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	4
DOIs	https://doi.org/10.1109/LED.2013.2247558
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2013.2247558

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author = "Tsai, {Tsung Ying} and Chang, {Shoou Jinn} and Weng, {Wen Yin} and Shuguang Li and Shin Liu and Hsu, {Cheng Liang} and Hsueh, {Han Ting} and Hsueh, {Ting Jen}",

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AU - Tsai, Tsung Ying

AU - Chang, Shoou Jinn

AU - Weng, Wen Yin

AU - Li, Shuguang

AU - Liu, Shin

AU - Hsu, Cheng Liang

AU - Hsueh, Han Ting

AU - Hsueh, Ting Jen

PY - 2013

Y1 - 2013

N2 - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

AB - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

GaN nanowire field emitters with the adsorption of au nanoparticles

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