GaN nanowires as electron field emitters

Bohan Wang; Kuangyuan Hsu; Yon-Hua Tzeng

doi:10.1109/NANO.2010.5697772

GaN nanowires as electron field emitters

Bohan Wang, Kuangyuan Hsu, Yon-Hua Tzeng

研究成果: Conference contribution

摘要

Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm². Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.

原文	English
主出版物標題	2010 10th IEEE Conference on Nanotechnology, NANO 2010
頁面	426-429
頁數	4
DOIs	https://doi.org/10.1109/NANO.2010.5697772
出版狀態	Published - 2010
事件	2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of 持續時間: 2010 8月 17 → 2010 8月 20

Other

Other	2010 10th IEEE Conference on Nanotechnology, NANO 2010
國家/地區	Korea, Republic of
城市	Ilsan, Gyeonggi-Do
期間	10-08-17 → 10-08-20

All Science Journal Classification (ASJC) codes

原子與分子物理與光學

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10.1109/NANO.2010.5697772

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title = "GaN nanowires as electron field emitters",

abstract = "Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.",

author = "Bohan Wang and Kuangyuan Hsu and Yon-Hua Tzeng",

year = "2010",

doi = "10.1109/NANO.2010.5697772",

language = "English",

isbn = "9781424470334",

pages = "426--429",

booktitle = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

note = "2010 10th IEEE Conference on Nanotechnology, NANO 2010 ; Conference date: 17-08-2010 Through 20-08-2010",

}

TY - GEN

T1 - GaN nanowires as electron field emitters

AU - Wang, Bohan

AU - Hsu, Kuangyuan

AU - Tzeng, Yon-Hua

PY - 2010

Y1 - 2010

N2 - Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.

AB - Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.

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U2 - 10.1109/NANO.2010.5697772

DO - 10.1109/NANO.2010.5697772

M3 - Conference contribution

AN - SCOPUS:79951840505

SN - 9781424470334

SP - 426

EP - 429

BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010

T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010

Y2 - 17 August 2010 through 20 August 2010

ER -

GaN nanowires as electron field emitters

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