GaN p-i-n photodetectors with an LT-GaN interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. H. Lan, C. C. Huang, W. J. Lin, Y. C. Cheng, C. M. Chang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photodetector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photodetector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.

原文English
頁(從 - 到)59-62
頁數4
期刊IET Optoelectronics
2
發行號2
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程

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