TY - GEN
T1 - GaN photodetectors prepared on silicon and sapphire substrates
AU - Chang, S. P.
AU - Chang, S. J.
AU - Lu, C. Y.
AU - Chuang, R. W.
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.
AB - GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.
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U2 - 10.1109/EDSSC.2008.4760697
DO - 10.1109/EDSSC.2008.4760697
M3 - Conference contribution
AN - SCOPUS:63249099134
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -