@article{e433030136854351ad14e59f6a11db6a,
title = "GaN schottky barrier photodetectors",
abstract = "We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.",
author = "Chang, {S. J.} and Wang, {S. M.} and Chang, {P. C.} and Kuo, {C. H.} and Young, {S. J.} and Chen, {T. P.} and Wu, {S. L.} and Huang, {B. R.}",
note = "Funding Information: Manuscript received November 11, 2009; revised February 14, 2010; accepted March 08, 2010. Date of publication June 07, 2010; date of current version July 23, 2010. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements. The associate editor coordinating the review of this paper and approving it for publication was Prof. Francisco Arregui.",
year = "2010",
doi = "10.1109/JSEN.2010.2045889",
language = "English",
volume = "10",
pages = "1609--1614",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}