GaN schottky barrier photodetectors

Shoou-Jinn Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

研究成果: Article

8 引文 (Scopus)

摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

原文English
文章編號5482027
頁(從 - 到)1609-1614
頁數6
期刊IEEE Sensors Journal
10
發行號10
DOIs
出版狀態Published - 2010 八月 13

指紋

Photodetectors
photometers
Nanorods
nanorods
templates
Sapphire
Leakage currents
rejection
sapphire
leakage
Fabrication
fabrication
Substrates

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

引用此文

Chang, S-J., Wang, S. M., Chang, P. C., Kuo, C. H., Young, S. J., Chen, T. P., ... Huang, B. R. (2010). GaN schottky barrier photodetectors. IEEE Sensors Journal, 10(10), 1609-1614. [5482027]. https://doi.org/10.1109/JSEN.2010.2045889
Chang, Shoou-Jinn ; Wang, S. M. ; Chang, P. C. ; Kuo, C. H. ; Young, S. J. ; Chen, T. P. ; Wu, S. L. ; Huang, B. R. / GaN schottky barrier photodetectors. 於: IEEE Sensors Journal. 2010 ; 卷 10, 編號 10. 頁 1609-1614.
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Chang, S-J, Wang, SM, Chang, PC, Kuo, CH, Young, SJ, Chen, TP, Wu, SL & Huang, BR 2010, 'GaN schottky barrier photodetectors', IEEE Sensors Journal, 卷 10, 編號 10, 5482027, 頁 1609-1614. https://doi.org/10.1109/JSEN.2010.2045889

GaN schottky barrier photodetectors. / Chang, Shoou-Jinn; Wang, S. M.; Chang, P. C.; Kuo, C. H.; Young, S. J.; Chen, T. P.; Wu, S. L.; Huang, B. R.

於: IEEE Sensors Journal, 卷 10, 編號 10, 5482027, 13.08.2010, p. 1609-1614.

研究成果: Article

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AB - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

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Chang S-J, Wang SM, Chang PC, Kuo CH, Young SJ, Chen TP 等. GaN schottky barrier photodetectors. IEEE Sensors Journal. 2010 8月 13;10(10):1609-1614. 5482027. https://doi.org/10.1109/JSEN.2010.2045889