GaN schottky barrier photodetectors prepared on patterned sapphire substrate

S. J. Chang, S. M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu, B. R. Huang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

原文English
頁(從 - 到)J212-J215
期刊Journal of the Electrochemical Society
157
發行號6
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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