GaN schottky barrier photodetectors prepared on patterned sapphire substrate

S. J. Chang; S. M. Wang; T. P. Chen; S. J. Young; Y. C. Lin; S. L. Wu; B. R. Huang

doi:10.1149/1.3374339

GaN schottky barrier photodetectors prepared on patterned sapphire substrate

S. J. Chang, S. M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu, B. R. Huang

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 ^-11 W and 1.74× 10¹⁰ cm Hz0.5 W^-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

原文	English
頁（從 - 到）	J212-J215
期刊	Journal of the Electrochemical Society
卷	157
發行號	6
DOIs	https://doi.org/10.1149/1.3374339
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

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abstract = "A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.",

author = "Chang, {S. J.} and Wang, {S. M.} and Chen, {T. P.} and Young, {S. J.} and Lin, {Y. C.} and Wu, {S. L.} and Huang, {B. R.}",

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T1 - GaN schottky barrier photodetectors prepared on patterned sapphire substrate

AU - Chang, S. J.

AU - Wang, S. M.

AU - Chen, T. P.

AU - Young, S. J.

AU - Lin, Y. C.

AU - Wu, S. L.

AU - Huang, B. R.

PY - 2010

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N2 - A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

AB - A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

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JO - Journal of the Electrochemical Society

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GaN schottky barrier photodetectors prepared on patterned sapphire substrate

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