GaN schottky barrier photodetectors prepared on patterned sapphire substrate

Shoou-Jinn Chang, S. M. Wang, T. P. Chen, S. J. Young, Yu-Cheng Lin, S. L. Wu, B. R. Huang

研究成果: Article

5 引文 (Scopus)

摘要

A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

原文English
期刊Journal of the Electrochemical Society
157
發行號6
DOIs
出版狀態Published - 2010 十一月 1

指紋

Aluminum Oxide
Photodetectors
Sapphire
Substrates
Dark currents
Metallorganic chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

引用此文

Chang, Shoou-Jinn ; Wang, S. M. ; Chen, T. P. ; Young, S. J. ; Lin, Yu-Cheng ; Wu, S. L. ; Huang, B. R. / GaN schottky barrier photodetectors prepared on patterned sapphire substrate. 於: Journal of the Electrochemical Society. 2010 ; 卷 157, 編號 6.
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GaN schottky barrier photodetectors prepared on patterned sapphire substrate. / Chang, Shoou-Jinn; Wang, S. M.; Chen, T. P.; Young, S. J.; Lin, Yu-Cheng; Wu, S. L.; Huang, B. R.

於: Journal of the Electrochemical Society, 卷 157, 編號 6, 01.11.2010.

研究成果: Article

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T1 - GaN schottky barrier photodetectors prepared on patterned sapphire substrate

AU - Chang, Shoou-Jinn

AU - Wang, S. M.

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AU - Lin, Yu-Cheng

AU - Wu, S. L.

AU - Huang, B. R.

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