GaN schottky barrier photodetectors with a β-Ga2O 3 cap layer

Zhen Da Huang, Ricky Wenkuei Chuang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, San Lein Wu

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

GaN Schottky barrier UV photodetectors (PDs) with a β-Ga 2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.

原文English
文章編號116701
期刊Applied Physics Express
5
發行號11
DOIs
出版狀態Published - 2012 十一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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